sensitive gate silicon controlled rectifiers reverse blocking thyristors h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n maximum ratings (t a =25c unless otherwise noted) electrical characteristics MCR100-6 mcr100-8 MCR100-6 mcr100-8 MCR100-6/mcr100-8 2 3 1 400 600 - 1.7 - - 0.8 5 rating unit unit max min symbol v a v ma v v c +150 t j 1/2 30-jan-07 lead(pb) - f r ee p b holding current i hl = 20ma, a v = 7v peak repetitve forward and reverse blocking voltage i drm = 10 a , v max = 10v on state voltage (1) i tm = 1a gate trigger voltage v ak = 7v note 1. forward current applied for 1 ms maximum duration, duty cycle 1% v drm, v rrm v tm v gt i h - - 10 a peak forward or reverse blocking current v ak = rated, v drm or v rrm i drm, i rrm i gt 5 15 30 80 15 30 80 200 a gate trigger current v ak = 7v a2 a1 a b characteristics v drm i trms collector-base voltage repetitive peak o?-stage voltage 600 400 0.8 symbol to-92 junction temperature range c -55 to +150 t stg storage temperature range scrs 0.8 a rms 400/600 voltage c g a 1.cathode 2.gate 3.anode free datasheet http:///
weitron http://www .weitron.com.tw dim a b c d e g h j k l m i n 3 . 3 0 1 . 1 0 0 . 3 8 0 . 3 6 4 . 4 0 3 . 4 3 4 . 3 0 max t o-92 t o-92 outline dimensions 3.70 1.40 0.55 0.51 4.70 - 4.70 2.64 14.50 1.270t yp e c h a b d l j k g 2.44 14.10 MCR100-6/mcr100-8 2/2 30-jan-07 unit:mm free datasheet http:///
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